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GaN on SiC (Silicon Carbdie) HEMT Wafer for RF or Power

The transport performance of heterostructure 2DEG GaN on SiC substrate wafer is better than GaN on Si / sapphire substrate.
https://www.ganwafer.com/product/gan-on-sic-hemt-wafer/ - Details - Similar

GaN on GaN Homoepitaxial Growth with Low Dislocation Density

GaN on GaN technology is grown GaN epi layers on homogeneous substrate, is an effective way to reduce dislocation density.
https://www.ganwafer.com/product/gan-on-gan/ - Details - Similar

GaN on Sapphire HEMT Wafer with High Power Density

GaN on Sapphire HEMT wafer is epitaxially grown with high-quality, high-uniformity AlGaN / GaN heterostructures for power or RF application.
https://www.ganwafer.com/product/gan-on-sapphire-hemt-wafer/ - Details - Similar

AlGaN / GaN on Silicon HEMT Wafer with High 2DEG Mobility

GaN on silicon substrate wafer is offered with HEMT or template structure used in D-mode / E-mode power or RF application.
https://www.ganwafer.com/product/gan-on-silicon-hemt-wafer/ - Details - Similar

GaN Wafer Including Substrate, Template Epitaxy Wafer

GaN (gallium nitride) wafer – wide band gap material provides higher efficiency and power density for gallium nitride chips.
https://www.ganwafer.com/product-category/gan-wafer/ - Details - Similar

Freestanding GaN (Gallium Nitride) Substrate Grown by HVPE

Free-standing GaN substrate wafer with low dislocation density, uniform surface and low defect density is for UHB-LED and LD.
https://www.ganwafer.com/product-category/gan-wafer/freestanding-gan-substrate/ - Details - Similar

N-Type GaN (Gallium Nitride) Freestanding Substrate Wafer

N-type GaN free-standing wafer is undoped or doped with Silicon for high power and high frequency devices: satellites, power amplifiers.
https://www.ganwafer.com/product/n-type-freestanding-gan-substrate/ - Details - Similar

Epi-ready Semi-Insulating Freestanding GaN (Gallium Nitride) Substrate

Semi-insulating Freestanding GaN (Gallium Nitride) Substrate grown by HVPE is less or free macro defect density for RF device.
https://www.ganwafer.com/product/semi-insulating-freestanding-gan-substrate/ - Details - Similar

Technology for Manufacturing SiC, GaN, III-V Semiconductor Wafers

Technology: HVPE, MOCVD, MBE, etc are used by semiconductor wafer fabs to grow SiC wafers, GaN wafers, III-V wafers with low defects and low impurity.
https://www.ganwafer.com/technology/ - Details - Similar

Compound Semiconductor Materials: SiC, GaN, III-V Group Material

Compound semiconductor materials including III-V wafers, SiC, GaN and other semiconductor wafers are offered with low defect density
https://www.ganwafer.com/products/ - Details - Similar

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